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CARBON NANOTUBE AND GRAPHENE FIELD-EFFECT TRANSISTORS: STATISTICAL SURVEY OF ISI INDEXED ARTICLES

Jan 10, 2019 17 Pages Citation : Rajipour M., Carbon Nanotube and Graphene Field-Effect Transistors, StatNano Publications, December 2018
SUMMARY
In this report, the growth trend of ISI-indexed articles published from 2005 to 2017 in the field of carbon nanotube and graphene field-effect transistors (CNTFETs/GFETs) is addressed. The results of this study show that the number of articles published on CNTFETs has increased until 2011, where a mild decreasing trend has started shortly afterwards. This is while the articles published on GFETs undergo a steady increase from 2006 to 2017. As a conclusion, the USA, China and South Korea are pioneer countries in the world in terms of the number of articles published in these two areas.