Nanomanufacturing. Key control characteristics. Graphene-related products. Field-effect mobility for layers of two-dimensional materials: field-effect transistor method

This part of IEC 62607 establishes a standardized method to determine the key control characteristic

field-effect mobility
for semiconducting two-dimensional (2D) materials by the

field-effect transistor (FET) method.
For two-dimensional semiconducting materials, the field-effect mobility is determined by fabricating a FET test structure and measuring the transconductance in a four-terminal configuration.

This method can be applied to layers of semiconducting two-dimensional materials, such as graphene, black phosphorus (BP), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2).
The four-terminal configuration improves accuracy by eliminating parasitic effects from the probe contacts and cables