The ability to absorb and dissipate impact energy is crucial for protective materials in transportation and aerospace. Traditional materials face a fundamental limitation: they can be either stiff to resist deformation or elastic to absorb impact,...
Dec 31, 2024
In the search for new materials that can enable more efficient electronics, scientists are exploring so-called 2D materials. These are sheets of just one atom thick, that may have all kinds of interesting electronic properties. If two sheets are p...
Dec 30, 2024
In a breakthrough set to revolutionize the semiconductor industry, the School of Engineering of the Hong Kong University of Science and Technology (HKUST) has developed the world's first-of-its-kind deep-ultraviolet (UVC) microLED display arr...
Dec 30, 2024
In a breakthrough set to revolutionize the semiconductor industry, engineers have developed the world's first-of-its-kind deep-ultraviolet (UVC) microLED display array for lithography machines. This enhanced efficiency UVC microLED has showca...
Dec 30, 2024
In a breakthrough set to revolutionize the semiconductor industry, the School of Engineering of the Hong Kong University of Science and Technology (HKUST) has developed the world’s first-of-its-kind deep-ultraviolet (UVC) microLED display array fo...
Dec 30, 2024
Penn Engineers have made a critical breakthrough that bridges a major health equity gap for pregnant people with pre-eclampsia, a condition that arises due to insufficient blood flow to the placenta and results in high maternal blood pressure and ...
Dec 29, 2024
Researchers from Khalifa University of Science and Technology have demonstrated the production of few-layered graphene sheets with high lateral sizes (4–5 μm) through a state-of-the-art solar irradiation-driven liquid-phase exfoliation technique.
Dec 29, 2024
University of Missouri researchers Carsten Ullrich and Deepak Singh have discovered unseen interactions that could impact the future of electronics.
Dec 28, 2024
A research team has developed high-performance diamond/ε-Ga2O3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was published in Nano Letters.
Dec 27, 2024
Exploiting an ingenious combination of photochemical (i.e., light-induced) reactions and self-assembly processes, a team led by Prof. Alberto Credi of the University of Bologna has succeeded in inserting a filiform molecule into the cavity of a ri...
Dec 27, 2024
