Nanomanufacturing – Key control characteristics – Part 6-xx: 2D materials – Measurement of Schottky barrier heights of 2D material-based field-effect transistors,
Standard Number | PWI 113-160 |
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Organization |
International Electrotechnical Commission
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Level | International |
Category | Test Method | Characterization | Measurement |
Status |
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ABSTRACT
This part of IEC 62607 establishes a standardized method to determine the key control characteristics of Schottky barrier height from the current-voltage characterization results obtained from two-dimensional (2D) material-based electronic devices. The standardized method requires a process to prepare contacts on top of the material and a formula to extract the Schottky barrier height. The method is destructive but it delivers very accurate and reproducible results. The document provides a standardized method for contact formation on two-dimensional materials which is essential for the application of the measurement method.