USTC enhances fluorescence brightness of single silicon carbide spin color centers

In a study published online in Nano Letters, the team led by Prof. LI Chuanfeng and Dr. XU Jinshi from the University of Science and Technology of China of the Chinese Academy of Sciences made progress in enhancing the fluorescence of single silicon carbide spin defects. The researchers leveraged surface plasmons to markedly boost the fluorescence brightness of single silicon carbide double vacancy PL6 color centers, leading to an improvement in the efficiency of spin control using the properties of co-planar waveguides. This low-cost method neither calls for complex micro-nano processing technology nor compromises the coherence properties of the color centers.