Study demonstrates atomic layer deposition route to scalable, electronic-grade van der Waals tellurium thin films

A research team, led by Professor Joonki Suh in the Department of Materials Science and Engineering and the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, has made a significant breakthrough in thin film deposition technology. By employing an innovative atomic layer deposition (ALD) process, Professor Seo successfully achieved regular arrangement of tellurium (Te) atoms at low temperatures as low as 50 degrees Celsius.