BREAKTHROUGH Graphene on Silicon Carbide Which Enable Small Amounts of UltraFast THz Chips
Date | 2nd, Feb 2024 |
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Source | NextBigFuture - Scientific News Websites |
DESCRIPTION
Researchers claims to have developed a method for producing a layer of graphene on a silicon carbide (SiC) wafer to form a semiconductor with a band gap of 0.6 eV and with room temperature electron mobility 10-20 times larger than other 2D semiconductors.