Breakthrough in non-volatile photonic-electronic memory with thin-film ferroelectrics

An international research team, led by Professor Gong Xiao from the National University of Singapore, has achieved a groundbreaking advancement in photonic-electronic integration. Their work, published in Light: Science & Applications ("Thin film ferroelectric photonic-electronic memory"), features Postdoc Zhang Gong and PhD student Chen Yue as co-first authors. They developed a non-volatile photonic-electronic memory chip utilizing a micro-ring resonator integrated with thin-film ferroelectric material.