Researchers develop high-performance heterojunction pn diodes
| Date | 27th, Dec 2024 |
|---|---|
| Source | Phys.org - Scientific News Websites |
DESCRIPTION
A research team has developed high-performance diamond/ε-Ga2O3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was published in Nano Letters.