Researchers use graphene to develop method to reliably integrates 2D semiconductors with dielectrics

Researchers from Peking University, Beijing Graphene Institute, University of Chinese Academy of Sciences and the University of Manchester have developed a new method to integrate 2D semiconductors with dielectric materials. Their approach involves the epitaxial growth of an ultra-thin dielectric film on a graphene-covered copper surface, which subsequently enables its transfer onto various substrates with minimal defects.