First wurtzite-structured MgSiN₂ thin film unlocks promising electronic properties

Wurtzite-structured crystals, characterized by their hexagonal symmetry, are widely valued for their unique electronic and piezoelectric properties—their ability to generate an electric charge when subjected to mechanical stress. Among these, gallium nitride (GaN), a key material in blue light-emitting diodes, and aluminum nitride (AlN), used in high-frequency radio frequency (RF) filters in smartphones, are prominent examples. These materials play a crucial role in advanced semiconductors, sensors, and actuators.