Researchers show that interlayer twist induces the formation of self-doped p–n junctions at atomically thin thickness

Atomically thin 2D materials are promising candidates for extending Moore’s Law due to their exceptional geometric and electronic properties. However, the realization of ultrathin p–n junctions, as crucial components of modern electronic and optoelectronic devices, remains a significant challenge due to the limitations of traditional doping techniques used in bulk materials.