Reversible spin splitting effect achieved in altermagnetic RuO₂ thin films

A research team affiliated with UNIST has made a advancement in controlling spin-based signals within a new magnetic material, paving the way for next-generation electronic devices. Their work demonstrates a method to reversibly switch the direction of spin-to-charge conversion, a key step toward ultra-fast, energy-efficient spintronic semiconductors that do not require complex setups or strong magnetic fields.