Getting electrons to move in a semiconductor: Gallium oxide shows high electron mobility, making it promising for better and cheaper devices

Researchers have shown that a wide-bandgap semiconductor called gallium oxide can be engineered into nanometer-scale structures that allow electrons to move much faster within the crystal structure. With electrons that move with such ease, Ga2O3 could be a promising material for applications such as high-frequency communication systems and energy-efficient power electronics.