Review of preparation and structures of silicon nanowire/germanium quantum dot composite materials

In a paper to be published in the forthcoming issue in NANO, a team of researchers from Yunnan University, China, have reviewed the recent research on preparation methods and structures of Silicon nanowires (SiNWs) and Germanium quantum dots (GeQDs) and their composites, in order to explore their novel physical properties and improve on their optoelectronic properties.