New way to estimate current induced magnetization switching efficacy in ultrathin systems

Scientists of Far Eastern Federal University (FEFU) in collaboration with colleagues from South Ural State University and the Chinese Academy of Sciences have developed an alternative method for numerical evaluation of the current induced local magnetization effect in ultrathin ruthenium-cobalt-ruthenium films with a wolfram layer added. That is another throw to fathom how to control spin orientation needed for the correct operation of spintronic electronics devices. A related article was published in Physical Review Applied.