Atomic 'patchwork' using heteroepitaxy for next-generation semiconductor devices
Date | 1st, Jul 2019 |
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Source | Phys.org - Scientific News Websites |
DESCRIPTION
Researchers from Tokyo Metropolitan University have grown atomically thin crystalline layers of transition metal dichalcogenides (TMDCs) with varying composition over space, continuously feeding in different types of TMDC to a growth chamber to tailor changes in properties. Examples include 20-nanometer strips surrounded by TMDCs with atomically straight interfaces and layered structures. They also directly probed the electronic properties of these heterostructures; potential applications include electronics with unparalleled power efficiency.