Direct after-fabrication tailoring of molybdenum disulphide transistors
Date | 8th, Jul 2019 |
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Source | Phys.org - Scientific News Websites |
DESCRIPTION
The fabrication of electronic devices from exfoliated 2-D materials can be tricky. The group of Daniel Granados at IMDEA Nanociencia has engineered a solution that consists of the after-fabrication tailoring of MoS2-FET transistors using pulsed-focused electron beam induced etching.