Scientists close to integrating silicon electronics and spintronics

Scientists from Far Eastern Federal University (FEFU) and the Far Eastern Branch of the Russian Academy of Sciences (FEB RAS) developed the nanoheterostructure consisted of a nanocrystal magnetite film (Fe3O4) covering a silicon substrate with an additional layer of silicon oxide (SiO2/Si). Its magnetic and magnetotransport properties may help to design highly efficient hybrid semiconductor devices with new spintronic elements. The related article was published in the Journal of Alloys and Compounds.