Epitaxially-grown molybdenum oxide advances as a bulk-like 2-D dielectric layer

Since the successful isolation of graphene from bulk graphite, remarkable properties of graphene have attracted many scientists to the brand-new research field of 2-D materials. However, despite excellent carrier mobility of graphene, direct application of graphene to field-effect transistors is severely hindered due to its gapless band structure. Alternatively, semiconducting transition metal dichalcogenides (TMDCs) have been focused intensively over the last decade. However, wide bandgap 2-D materials with > 3 eV have been required for UV-related optoelectronic devices, power electronics, and dielectric layers.