Si–Gr–Ge Transistor Made for Better Terahertz Electronics | NextBigFuture.com

A Si–Gr–Ge transistor has been demonstrated. The Schottky emitter provides an emitter charging time of ~118 ps with a current of 692 A cm−2 and a capacitance of 41 nF cm−2, which is expected to increase the alpha cutoff frequency from the previous ~1 MHz by using tunnel emitters to over 1 GHz by using the Schottky emitter in a graphene-base transistor. With further engineering, the vertical semiconductor–graphene–semiconductor transistor is promising for high-speed applications in future 3D monolithic integration because of the advantages of the atomic thickness and high carrier mobility of graphene, and the high feasibility of a Schottky emitter. Nature Communications – A vertical silicon-graphene-germanium