Scientists shrink fin-width of FinFET to nearly the physical limit

FinFETs are known to be an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. It was first proposed in 1990s in order to avoid the short channel effect and other drawbacks resulted from the shrinking of transistor size. Because of the limitation of nanofabrication, the minimum fin width is about 5 nm in current technology.