At VLSI 2020, CEA-Leti Demos New Architecture for HPC Devices Using Gate-All-Around Nanosheet Fabrication Process
| Date | 16th, Jun 2020 |
|---|---|
| Source | AZoNano - Nanotechnology Websites |
DESCRIPTION
CEA-Leti has demonstrated fabrication of a new gate-all-around (GAA) nanosheet device as an alternative to FinFET technology targeting high-performance (HPC) applications such as smartphones, laptops, and mobile systems with data collection and processing involving low-power and high-speed operation.