Order in the disorder: Density fluctuations in amorphous silicon discovered

For the first time, a team has identified the atomic substructure of amorphous silicon with a resolution of 0.8 nanometers using X-ray and neutron scattering at BESSY II and BER II. Such a-Si:H thin films have been used for decades in solar cells, TFT displays, and detectors. The results show that three different phases form within the amorphous matrix, which dramatically influences the quality and lifetime of the semiconductor layer.