Comb-like etching regulated growth for large-area graphene nanoribbon arrays

The low on/off current ratio in intrinsic graphene-based field-effect transistor has inspired the development of bandgap engineering, which contain tailoring graphene into narrow ribbons, doping graphene with heteroatom, and applying stress or vertical electric field. Graphene nanoribbons, which introduce a bandgap by confining charge carriers in lateral dimension, are a lead candidate for switching devices. Scientists in China developed an in-situ growth of graphene nanoribbon arrays on liquid metal without assistance of template.