Reversible Oxygen Migration Enables Ferroelectricity in Hafnia-Based Thin Films
| Date | 16th, Apr 2021 |
|---|---|
| Source | AZoNano - Nanotechnology Websites |
DESCRIPTION
Hafnium-based thin films, with a thickness of only a few nanometres, show an unconventional form of ferroelectricity. This allows the construction of nanometre-sized memories or logic devices....