Improving Photoluminescence in Silicon Boosts PIC Performance

Researchers in Russia have increased photoluminescence (PL) in silicon using germanium quantum dots and a specially designed silicon photonic crystal. Developed by scientists from Skolkovo Institute of Science and Technology (Skoltech), Institute for Physics of Microstructures of the Russian Academy of Sciences, Lobachevsky State University of Nizhny Novgorod, ITMO University, Lomonosov Moscow State University, and A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, the method and demonstration could lead to optoelectronic components that are compatible with silicon technology. The technique is based on bound states of continuum. According to the researchers, it may pave the way to photonic integrated...