Quantifying spin for future spintronics: Spin-momentum locking induced anisotropic magnetoresistance in monolayer WTe2

An international collaboration quantifies spin in a 2D quantum spin Hall insulator (QSHI), a promising option for future low-energy nano-electronic and spintronic devices. The team used anisotropic magnetoresistance (AMR) to reveal the relationship between the electrons' spin and momentum when the current is spin-polarized, demonstrating the promising potential of QSHI for novel spintronic devices, and proving the value of AMR for design and development of QSHI-based spintronic devices.