Analysis and containment of defect formation in Zn3P2 crystals: A nanoscale approach

A study published in Nanoscale demonstrates that high-quality Zn3P2 crystals, free of interface defects, can be fabricated with a nanoscale approach. It consists in using selective area epitaxy to grow nanowires of Zn3P2, a material of interest for application in solar and photovoltaic cells. This work, coordinated by ICN2 group leader ICREA Prof. Jordi Arbiol, also employs state-of-the-art microscopy techniques and 3D simulations to thoroughly investigate the formation of differently-oriented structures within the nanowires.