Speeding Through Semiconductor Nanowires: New Basis for Ultrafast Transistors

A team of researchers from the Helmholtz-Zentrum Dresden-Rossendorf (HZDR), the TU Dresden, and NaMLab has now succeeded in experimentally demonstrating that electron mobility in nanowires is remarkably enhanced when the shell places the wire core under tensile strain. This phenomenon offers novel opportunities for the development of ultrafast transistors.