The large-area synthesis and transfer of multilayer hBN for fabricating 2D electronics

Researchers at Kyushu University, the National Institute of Advanced Industrial Science and Technology (AIST) and Osaka University in Japan have recently introduced a new strategy for synthesizing multi-layer hexagonal boron nitride (hBN), a material that could be used to integrate different 2D materials in electronic devices, while preserving their unique properties. Their proposed approach, outlined in a paper published in Nature Electronics, could facilitate the fabrication of new highly performing graphene-based devices.