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Oxygen Migration Enables Ferroelectricity on Nanoscale

2021-04-20

Oxygen Migration Enables Ferroelectricity on Nanoscale

Hafnium-based thin films, with a thickness of only a few nanometres, show an unconventional form of ferroelectricity. This allows the construction of nanometre-sized memories or logic devices. However, it was not clear how ferroelectricity could occur at this scale. A study that was led by scientists from the University of Groningen showed how atoms move in a hafnium-based capacitor: migrating...