This standard establishes a guidance for assessing stability of devices fabricated using 2D materials, by the change of temperature stress on the sample under test. This standard uses a characterization model of determining the density of interface defects as that of the semiconductor FETs where the FET consists of two-dimensional (2D) materials. For the stability criteria guidance, this standard uses the electrically active interface defect density and its variance under the temperature stress conditions. And the standard provides a methodology for the interface defects measurement of 2D materials and a recommended test device structure which is an essential prerequisite. The objectives of this standard are to · give a methodology to assess the stability of the subassembly of FET, the interface defect density variance, by the temperature stress on the sample under test; · provide a vertical capacitor structure of the sample under test information made of 2D materials; · establish a guidance for the defects measurement aspect by applying various frequencies to the sample under test; · give relevant references; and · establish the minimum reporting requirements.
