Nanomanufacturing - Key control characteristics - Part 6-38: Graphen- related products – Schottky barrier heights of 2D material-based field-effect transistors

This part of IEC 62607 establishes a standardized method to determine the key control characteristics of Schottky barrier height from the current-voltage characterization results obtained from two-dimensional (2D) material-based electronic devices. The standardized method requires a process to prepare contacts on top of the material and a formula to extract the Schottky barrier height. The method is destructive but it delivers very accurate and reproducible results. The document provides a standardized method for contact formation on two-dimensional materials which is essential for the application of the measurement method.