This standard specifies the wafer test specification for read and write parameters of nanoscale phase change memory cells. The test results can be used to characterize phase change
The electrical operability of the storage material or device.
This standard applies to the sulfur-based compounds as the main raw material, based on semiconductor wafer manufacturing process electrode size is less than 100nm
Of the phase change memory cell, 100nm ~ 300nm phase change memory cell can also refer to the implementation of this standard.
This standard does not apply to storage units that contain peripheral drive circuits.