| Date | 31st, May 2019 |
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Home > Press > Laser technique could unlock use of tough material for next-generation electronics: Researchers make graphene tunable, opening up its band gap to a record 2.1 electronvolts
Graphene, a super tough wonder material, hasn't made it into electronics yet because it doesn't conduct an electric current on its own. Researchers used a laser technique to permanently stress graphene into a structure that allows the flow of electric current.
CREDIT
Purdue University image/Gary Cheng
Abstract: ABSTRACT
Asymmetric 3D Elastic-Plastic Strain-Modulated Electron Energy Structure in Monolayer Graphene by Laser Shocking
Maithilee Motlag1, Prashant Kumar1, Kevin Y. Hu1, Shengyu Jin1, Ji Li1, Jiayi Shao1, Xuan Yi1, Yen-Hsiang Lin2, Jenna C. Walrath2, Lei Tong3, Xinyu Huang3, Rachel S. Goldman2, Lei Ye3, and Gary J. Cheng1
1Purdue University, West Lafayette, IN, USA
2University of Michigan, Ann Arbor, MI, USA
3Huazhong University of Science and Technology, Wuhan, China
doi: 10.1002/adma.201900597
Graphene has a great potential to replace silicon in prospective semiconductor industries due to its outstanding electronic and transport properties; nonetheless, its lack of energy bandgap is a substantial limitation for practical applications. To date, straining graphene to break its lattice symmetry is perhaps the most efficient approach toward realizing bandgap tunability in graphene. However, due to the weak lattice deformation induced by uniaxial or in?plane shear strain, most strained graphene studies have yielded bandgaps
