Simulating Semiconductor Device Quantum Effects

In this webinar, we introduce the Semiconductor Module, an add-on to COMSOL Multiphysics®, which provides dedicated features for the analysis of semiconductor device operation at the fundamental physics level.

In this webinar, we introduce the Semiconductor Module, an add-on to COMSOL Multiphysics®, which provides dedicated features for the analysis of semiconductor device operation at the fundamental physics level. 

The Semiconductor physics interface is based on the drift-diffusion equations, with the optional density-gradient contribution for quantum confinement effects. It is useful for simulating devices such as bipolar transistors, MESFETs, MOSFETs, IGBTs, ISFETs, Schottky diodes, solar cells, photodiodes, and LEDs. Heating, optical transition, and other multiphysics effects can be readily added to a model.

The Schrödinger Equation and Schrödinger-Poisson interfaces are useful for modeling quantum-confined systems such as superlattices, quantum wells, quantum wires, and quantum dots. They can also be used to simulate general quantum systems, such as a Bose–Einstein condensate and its vortex lattice formation.