In most image sensors, the red, green, and blue components of a given pixel are captured independently using a dedicated photodetector cell for each color. Although the three cells of each pixel are arranged laterally and as close to each other as possible, the design takes at least three times as much space as each individual cell. Additionally, the manufacture and processing costs for these photodetectors can be high due to their complexity.
Using a low-temperature fabrication procedure, the scientists managed to squeeze in an astoundingly high number of pixels in a small area. “The device density of our photodetector array is 5500 devices per square centimeter, which is remarkably larger than that reported for previous solution-processed flexible photodetectors, which reaches up to 1600 devices,” said Sung Kyu Park, a professor at Chung-Ang University.
The device demonstrated excellent color selectivity and photosensitivity. In the long term, the team believes that future improvements could enable vertically stacked quantum dots to replace existing CMOS sensors in many applications due to their simple fabrication, low power consumption, durability, and capabilities. “It should be widely applicable in fields such as wearable sensory systems, biomedicine, and autonomous driving,” Park said.
The research was published in Advanced Materials (www.doi.org/10.1002/adma.202106215).
