Nanotechnologies. Characterization of single-wall carbon nanotubes using near infrared photoluminescence spectroscopy

DD ISO/TS 10867:2010 Nanotechnologies. Characterization of single-wall carbon nanotubes using near infrared photoluminescence spectroscopy DD ISO/TS 10867 is the standard that provides guidelines for the characterization of single-wall carbon nanotubes (SWCNTs) using near infrared (NIR) photoluminescence (PL) spectroscopy. DD ISO/TS 10867 provides a measurement method for the determination of the chiral indices of the semi-conducting SWCNT in a sample and their relative integrated PL intensities. The method can be expanded to estimate relative mass concentrations of semi-conducting SWCNTs in a sample from measured integrated PL intensities and knowledge of their PL cross-sections. Discovery of band gap photoluminescence (PL) of single-wall carbon nanotubes (SWCNTs) has provided a new way to characterize their unique electronic properties induced by their low dimensionality. The method can provide the chiral indices of the semi-conducting SWCNTs in a sample and their relative integrated PL intensities. With the knowledge of their PL cross-sections, the relative mass concentrations of semiconducting SWCNTs in a sample can be estimated. Contents of DD ISO/TS 10867 include: • Scope • Normative references • Terms and definitions • Principles of band gap photoluminescence of SWCNTs • Structure of SWCNTs • Band structure and PL peaks • Exciton effects • NIR-PL apparatus • NIR-PL spectrometer • Light source • Sample preparation methods • Preparation of D2O dispersion for measurement • Preparation of solid film dispersion for measurement • Measurement procedures • Data analysis and results interpretation • Empirical rules for structural assignment • Determination of the chiral indices of the semi-conducting SWCNTs in a sample • Uncertainties • Test report • Case studies • Bibliography